bc318c ? pnp epitaxial silicon transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com bc318c rev. 1.0.0 1 september 2007 bc318c pnp epitaxial silicon transistor ? this device is designed for general purpose amplif ier application at collector currents to 800ma. ? sourced from process 38. absolute maximum ratings t c =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulte d on applications involving pulsed or low duty cycle operations . thermal characteristics t a =25 c unless otherwise noted *device mounted on fr-4 pcb 1.6? x 1.6? x 0.06?. electrical characteristics t c =25 c unless otherwise noted notes: 1. these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. 3.these ratings are based on a maximum junction temperature of 150degrees c. symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 5 v i c collector current (dc) 100 ma t j , t stg operating and storage junction temperature range -55 ~ 150 c symbol parameter max. units p d total device dissipation derate above 25 c 625 5.0 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 c/w symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = 10 a 30 v bv ceo collector-emitter breakdown voltage i c = 1ma 20 v bv ebo emitter-base breakdown voltage i e = 100 a 5 v bv ces collector-emitter breakdown voltage i c = 100 a 30 v i cbo collector cut-off current v cb = 20v t = 25 c t = 100 c 30 15 na a h fe dc current gain v ce = 5v, i c = 10 a v ce = 5v, i c = 2 ma 100 420 800 v ce (sat) collector-emitter saturation voltage i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma 0.2 0.5 v v be (on) base-emitter on voltage v ce = 5v, i c = 2m v ce = 5v, i c = 10ma 0.57 0.72 0.77 v c cb output capacitance v cb = 10v, i e = 0, f = 1mhz 4 pf 1. emitter 2. base 3. collector to-92 1
bc318c pnp epitaxial silicon transistor bc318c trademarks the following are registered and unregistered trademarks and service marks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit d escribed herein; neither does it convey any license under its patent rights, nor the rights of othe rs. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semicon ductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information for mative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semic onductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchil d semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificati ons on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i30 ? 2007 fairchild semiconductor corporation www.fairchildsemi.com bc318c rev. 1.0.0 2
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